Photoluminescence and degradation properties of the carbonized porous silicon

The photoluminescence (PL) spectra of porous silicon (por-Si) subjected to carbonization and simultaneous boron doping at different temperatures (1000 degrees - 1200 degrees C) was studied. It was discovered that this treat ment leads to a shift of the PL band in per-Si toward high frequencies and to the appearance of two peaks near 1.9 eV and 2.4 eV. For carbonized porous silicon, substantial reduction of the PL intensity degradation rate was found under continuous laser irradiation, especially in the blue-green band of visible spectrum. The results of this work allow to consider the high temperature carbonization as a promising method of the PL spectral characteristics modification and light-emitting properties stabilization in per-Si.