Computer Simulation of Concentration Distribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

To explain and engineer intrinsic point defect behavior in large-diameter single crystal Si grown using the Czochralski (CZ) method, a unified model valid for all pulling processes, crystal resistivities, and electrically inactive impurity concentrations that couples the effects of thermal stress, dopants, and interstitial oxygen (O-i) atoms is needed. We determined the thermal equilibrium concentration of intrinsic point defects (vacancy V and self-interstitial Si I) in CZ-Si crystal as functions of thermal stresses, type and concentration of dopant, and the concentration of O-i atoms. Global heat transfer during crystal growth in a puller was simulated using STR Group's CGSim software package. A visual distribution of V and I concentrations inside a growing doped and thermally stressed Si ingot is very useful for improving the quality of large-diameter CZ-Si crystals. (C) 2019 The Electrochemical Society.