Reliable before-fabrication forecasting of MEMS piezoresistive pressure sensor: mathematical modelling and numerical simulation

被引:3
作者
Jindal, Sumit Kumar [1 ]
Patra, Ritayan [1 ]
Banerjee, Sayak [1 ]
Paul, Arin [1 ]
Kanekal, Dadasikandar [1 ]
Kumar, Ajay [2 ]
机构
[1] Vellore Inst Technol, Sch Elect Engn, Vellore, Tamil Nadu, India
[2] Natl Inst Technol, Dept Elect & Commun Engn, Jamshedpur, Bihar, India
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2022年 / 28卷 / 07期
关键词
DESIGN;
D O I
10.1007/s00542-022-05305-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Micro-mechanical systems (MEMS) based piezoresistive pressure sensors have significant importance in several pressure sensor devices in real world, i.e., aviation, IoT and consumer electronics, nuclear and thermal power plants. Mathematical analysis for modelling piezoresistive pressure sensors is gaining significant importance. MEMS piezoresistive pressure sensors utilize diaphragms of several shapes and geometries. In this work, a MEMS piezoresistive pressure sensor having a square diaphragm and piezoresistive elements attached in a Wheatstone bridge configuration useful in harsh environmental conditions has been thoroughly analyzed and presented. Silicon carbide (SiC) has higher Young's Modulus, carrier mobility, corrosion tolerance, Poisson's ratio, poses extreme chemical inertness and is extremely wear resistant-properties which are absolutely essential for application in harsh environments. Hence, Silicon carbide is most preferred for fabricating these sensors. Sensitivity is a crucial parameter that defines the sensor's performance. According to thin plate mechanics, thinner the diaphragm membrane, more it has deflection, stress and sensitivity, but it deteriorates the linearity of the sensor which happens to be a crucial parameter. Thus, optimal structural parameters need to be chosen to improve the sensitivity of the pressure sensor. Different device characteristics of these sensors have been measured, analyzed and compared to get the best performance out of them. The simulation of this piezoresistive pressure sensor is carried out in MATLAB. The authors have presented a detailed mathematical model in this work which assists in assessing the affectability of piezoresistive SiC-based pressure sensors analytically and their working in harsh environmental conditions prior to going for the fabrication process.
引用
收藏
页码:1653 / 1661
页数:9
相关论文
共 29 条
[1]   Zero-Balance Method for Evaluation of Sealed Cavity Pressure Down to Single Digit Pa Using Thin Silicon Diaphragm [J].
Al Farisi, Muhammad Salman ;
Hirano, Hideki ;
Tanaka, Shuji .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2020, 29 (03) :418-426
[2]   Analytical modeling to estimate the sensitivity of MEMS technology-based piezoresistive pressure sensor [J].
Belwanshi, Vinod .
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2021, 20 (01) :668-680
[3]   Quantitative Analysis of MEMS Piezoresistive Pressure Sensors Based on Wide Band Gap Materials [J].
Belwanshi, Vinod ;
Topkar, Anita .
IETE JOURNAL OF RESEARCH, 2019, 68 (01) :667-677
[4]  
Bhutani S, 2020, PHYS SCRIPTA
[5]  
Deimerly Y, 2013, THESIS ELECT U PARIS
[6]  
Donida A, 2015, IEEE INT C INSTRUMEN
[7]   Effects of various loading on the performance of MEMS cantilever beam for in-field tuning of sensors and actuators for high temperature and harsh environment applications [J].
Dounkal, Manoj Kumar ;
Bhan, R. K. ;
Kumar, Navin .
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2020, 26 (02) :377-394
[8]   Design and simulation of a high sensitive stripped-shaped piezoresistive pressure sensor [J].
Farhath, Maliha ;
Samad, Mst. Fateha .
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2020, 19 (01) :310-320
[9]   Analytical Solutions of Sensitivity for Pressure Microsensors [J].
Gong, Shih-Chin ;
Lee, Chengkuo .
IEEE SENSORS JOURNAL, 2001, 1 (04) :340-344
[10]   The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review [J].
Hoang-Phuong Phan ;
Dzung Viet Dao ;
Nakamura, Koichi ;
Dimitrijev, Sima ;
Nam-Trung Nguyen .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2015, 24 (06) :1663-1677