Miniaturization of Swelling Structures Fabricated on 6H-SiC Surface by Ion-beam Irradiation

被引：0

作者：

Momota, S. ^{[1
]}

Honda, K. ^{[1
]}

Taniguchi, J. ^{[2
]}

机构：

[1] Kochi Univ Technol, Tosayamada, Kochi, Japan

[2] Tokyo Univ Sci, Katsushika Ku, Tokyo, Japan

来源：

2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018) | 2018年

关键词：

swelling structure; Ar-beam; SiC; fabrication; micro; TEMPERATURE;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In a series of previous experiments, a swelling structure, which was fabricated by ion-beam induced expansion effect, was observed on crystal materials and the height changes depending on irradiation condition. In case of SiC crystal, which is one of hopeful ultra-hard materials, the expansion rate is relatively large 10-20%. This result indicates the possibility of the expansion effect as a fabrication process for three-dimensional structures on SiC surface. In the present research, fabrication of swelling structure on 6H-SiC substrate, whose lateral size is in micro-meter scale, has been tried by irradiating Ar beams through a stencil mask.

引用

页码：94 / 96

页数：3

共 10 条

[1] Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review [J].