Preparation of ZnO:Zr thin films by sputtering Zn:Zr targets

被引：0
|
作者：
Yuan Chang-kun [1 ]
机构：
[1] Shandong Univ Technol, Sch Sci, Zibo 255049, Shandong, Peoples R China
来源：
CHEMICAL ENGINEERING AND MATERIAL PROPERTIES II | 2012年 / 549卷
关键词：
ZnO:Zr films; DC reactive magnetron sputtering; film thickness;
D O I：
10.4028/www.scientific.net/AMR.549.331
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
Transparent conductive ZnO:Zr thin films with different thicknesses were fabricated on glass slides by DC reactive magnetron sputtering from Zn:Zr targets consisting of Zn disk and Zr metallic chips in Ar+O-2 mixture gas. X-ray diffraction, four-point probe measurements, UV vis spectrophotometers and thin film thickness tester were employed to characterize the structure, electrical and optical properties of ZnO:Zr films, respectively. The experimental investigations indicate that film thickness has an important effect on the crystal structure, optical and electrical properties of the deposited films.
引用
收藏
页码：331 / 334
页数：4
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