The Preparation Methods of Gallium Nitride Powder

被引：0

作者：

Yang, Wen-Zhi ^{[1
]}

Huang, Wei ^{[1
,2
]}

Li, Ya-Feng ^{[3
]}

Huang, Wei-Ming ^{[1
]}

Shang, Fu-Jun ^{[1
]}

Chen, Zi-Ming ^{[1
]}

机构：

[1] China Acad Ordnance Sci, Ningbo Branch, Ningbo 315103, Zhejiang, Peoples R China

[2] Ningbo Univ, Coll Mech Engn & Mech, Ningbo 315103, Zhejiang, Peoples R China

[3] Zhejiang Business Technol Inst, Ningbo 315103, Zhejiang, Peoples R China

来源：

PROCEEDINGS OF THE 4TH 2016 INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND ENGINEERING (ICMSE 2016) | 2016年 / 101卷

关键词：

Gallium nitride; Preparation methods; Nano powder; NANOCRYSTALLINE GAN; ARC PLASMA; GROWTH; PHOTOLUMINESCENCE; NANOBELTS; NANOWIRES; ROUTE; GA2O3;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gallium nitride (GaN) has attracted much attention for a long time as a promising material for semiconductor device application in the transistors, visible light-emitting sources and high powder diodes. Many investigations are paid to the synthesis method, the process of crystal growth, structure and optical properties of GaN powder and its film. In this article, the preparation methods of GaN powder using the different kinds of raw materials have been reviewed.

引用

页码：535 / 539

页数：5

共 23 条

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