Enhanced performance characteristics of n-ZnO/p-GaN heterojunction light-emitting diodes by forming excellent Ohmic contact to p-GaN

被引:14
|
作者
Jeong, Seonghoon [1 ]
Kim, Hyunsoo [1 ]
机构
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea
基金
新加坡国家研究基金会;
关键词
ZnO/GaN; Heterojunction; Ohmic contact; Light emitting diodes; Series resistance; UV ELECTROLUMINESCENCE; EMISSION;
D O I
10.1016/j.mssp.2015.06.045
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report significantly improved performance characteristics of n-ZnO/p-GaN heterojunction light-emitting diodes (LEDs) by forming excellent Ohmic contact to p-GaN. An elaborately designed fabrication procedure to suppress ZnO sputtering damage on p-GaN, i.e., a selective SiO2 passivation of the p-GaN surface, was shown to yield excellent Ohmic contact to p-GaN with a specific contact resistance of 9.8 x 10(-3) Omega cm(2), while the reference contact formed on non-protected p-GaN showed non-Ohmic behavior. Heterojunction LEDs fabricated with the improved p-Ohmic contact had much better performance characteristics than did the reference LEDs, i.e., the forward voltages at 2 mA were 5.6 and 16.2 V, the series resistances were 404 and 1693 Omega, and the optical output powers at 3 mA were 56.4 and 19.9 mu W for the developed and reference LEDs, respectively. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:771 / 774
页数:4
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