Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering

被引：25

作者：

Sapeli, M. M. I. ^{[1
,2
]}

Ferdaous, M. T. ^{[1
]}

Shahahmadi, S. A. ^{[1
]}

Sopian, K. ^{[3
]}

Chelvanathan, P. ^{[1
,3
]}

Amin, N. ^{[1
,4
]}

机构：

[1] Natl Univ Malaysia, Fac Engn & Built Environm, Dept Elect Elect & Syst Engn, Bangi 43600, Selangor, Malaysia

[2] Univ Teknol MARA, Ctr Fdn Studies, Dengkil 43800, Selangor, Malaysia

[3] Natl Univ Malaysia, SERI, Bangi 43600, Selangor, Malaysia

[4] Univ Tenaga Nas, Natl Energy Univ, Inst Sustainable Energy, Jalan IKRAM UNITEN, Kajang 43000, Selangor, Malaysia

来源：

MATERIALS LETTERS | 2018年 / 221卷

关键词：

Cr doping; CZTS; Sputtering; Defects; Optoelectronic;

D O I：

10.1016/j.matlet.2018.03.056

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this letter, we report the structural and optoelectronic properties of chromium-doped Cu2ZnSnS4 (CZTS:Cr) deposited by co-sputtering technique. Addition of chromium was observed to deteriorate the Cu2ZnSnS4 crystallinity as well as inducing the growth of cubic-ZnCr2S4 secondary phase. Grain size as large as 0.5 mu m was observed for the doped sample. Bandgap was found to vary (1.51-1.70 eV), whereas the deep level defect state was calculated to be positioned at 0.20-0.33 eV above the valence band maximum (VBM) depending on the chromium concentration. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：22 / 25

页数：4

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