Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering

被引：25
|
作者：
Sapeli, M. M. I. [1 ,2 ]
Ferdaous, M. T. [1 ]
Shahahmadi, S. A. [1 ]
Sopian, K. [3 ]
Chelvanathan, P. [1 ,3 ]
Amin, N. [1 ,4 ]
机构：
[1] Natl Univ Malaysia, Fac Engn & Built Environm, Dept Elect Elect & Syst Engn, Bangi 43600, Selangor, Malaysia
[2] Univ Teknol MARA, Ctr Fdn Studies, Dengkil 43800, Selangor, Malaysia
[3] Natl Univ Malaysia, SERI, Bangi 43600, Selangor, Malaysia
[4] Univ Tenaga Nas, Natl Energy Univ, Inst Sustainable Energy, Jalan IKRAM UNITEN, Kajang 43000, Selangor, Malaysia
来源：
MATERIALS LETTERS | 2018年 / 221卷
关键词：
Cr doping; CZTS; Sputtering; Defects; Optoelectronic;
D O I：
10.1016/j.matlet.2018.03.056
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this letter, we report the structural and optoelectronic properties of chromium-doped Cu2ZnSnS4 (CZTS:Cr) deposited by co-sputtering technique. Addition of chromium was observed to deteriorate the Cu2ZnSnS4 crystallinity as well as inducing the growth of cubic-ZnCr2S4 secondary phase. Grain size as large as 0.5 mu m was observed for the doped sample. Bandgap was found to vary (1.51-1.70 eV), whereas the deep level defect state was calculated to be positioned at 0.20-0.33 eV above the valence band maximum (VBM) depending on the chromium concentration. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：22 / 25
页数：4
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