Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems

被引：0

作者：

Zhao, Tiefu ^{[1
]}

Wang, Jun ^{[1
]}

Huang, Alex Q. ^{[1
]}

Agarwal, Anant ^{[2
]}

机构：

[1] North Carolina State Univ, Dept Elect & Comp Engn, Semicond Power Elect Ctr, Raleigh, NC 27695 USA

[2] Cree Inc, Durham, NC 27703 USA

来源：

CONFERENCE RECORD OF THE 2007 IEEE INDUSTRY APPLICATIONS CONFERENCE FORTY-SECOND IAS ANNUAL MEETING, VOLS. 1-5 | 2007年

关键词：

SiC MOSFET; SiC Schottky Diode; Motor drive system; Loss analysis;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

With the rapid development of Silicon carbide (SiC) material quality. SIC power devices are gaining tremendous attentions in power electronics. In this paper, a SiC device based motor drive system is performed to provide a quantitative estimate of the system improvement. Two 60kW motor drive systems based on SiC MOSFET/SCHOTTKY Diode and Si IGBTs are designed. The power losses of the two inverters with sinusoidal pulse width modulation (SPWM) control are calculated analytically. By comparing the efficiencies, sizes and temperatures of the two designed systems, SiC device shows the superior advantages of smaller loss, better efficiency and smaller size in the same motor drive application.

引用

页码：331 / +

页数：2

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