Charge traps and emission kinetics in LuAP:Ce

In this contribution we demonstrate the influence of shallow charge traps on emission kinetics of LuAlO3:Ce3+ (LuAP:Ce) scintillator. Shallow traps through their interference with the recombination process not only introduce into the emission time profiles long components (afterglow) but also can change the rising and decaying parts of time profiles. The lifetime of excited Ce3+ ion in LuAP crystal is similar to 18 ns, while the excitation at 78 mn leads to the emission described by 21.5 and 1.22 ns decay and rise time constants, respectively. Furthermore, temperature dependence of time profile shapes is observed. The analysis of emission kinetics measured against temperature shows that observed features can be explained in terms of a trap described by the following parameters: E = 0.142 eV and s = 6.087x10(10) s(-1). s-1.