Quantitative analysis of a-Si1-xCx:H thin films

被引：9

作者：

Gracin, D

Jaksic, M

Yang, C

Borjanovic, V

Pracek, B

机构：

[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia

[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore

[3] Fac Elect Engn & Comp, Dept Appl Phys, Zagreb 10000, Croatia

[4] Inst Surface Engn & Optoelect, Surface Anal Lab, Ljubljana 1001, Slovenia

来源：

APPLIED SURFACE SCIENCE | 1999年 / 144-45卷

关键词：

carbon content; hydrogen content; amorphous films; backscattering; Auger spectroscopy; FTIR spectroscopy;

D O I：

10.1016/S0169-4332(98)00795-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The composition of a-Si1-xCx:H films, deposited by magnetron sputtering, was measured by AES (Auger Electron Spectroscopy), RES (Rutherford Backscattering Spectrometry) using both, protons and alpha-particles, ERDA (Elastic Recoil Detection Analysis) and FTIR spectroscopy. The results obtained by all three methods show agreement in C-C/C-Si ratio within the experimental error. However, the AES somewhat underestimates the silicon concentrations, which is discussed as a consequence of chemical bonding and matrix effects. The hydrogen concentrations obtained by ERDA are typically about 30% higher than those estimated by FTIR, possibly due to the presence of non-bonded hydrogen in the film. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：188 / 191

页数：4

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