Quantitative analysis of a-Si1-xCx:H thin films

被引：9
作者：
Gracin, D
Jaksic, M
Yang, C
Borjanovic, V
Pracek, B
机构：
[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia
[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
[3] Fac Elect Engn & Comp, Dept Appl Phys, Zagreb 10000, Croatia
[4] Inst Surface Engn & Optoelect, Surface Anal Lab, Ljubljana 1001, Slovenia
来源：
APPLIED SURFACE SCIENCE | 1999年 / 144-45卷
关键词：
carbon content; hydrogen content; amorphous films; backscattering; Auger spectroscopy; FTIR spectroscopy;
D O I：
10.1016/S0169-4332(98)00795-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The composition of a-Si1-xCx:H films, deposited by magnetron sputtering, was measured by AES (Auger Electron Spectroscopy), RES (Rutherford Backscattering Spectrometry) using both, protons and alpha-particles, ERDA (Elastic Recoil Detection Analysis) and FTIR spectroscopy. The results obtained by all three methods show agreement in C-C/C-Si ratio within the experimental error. However, the AES somewhat underestimates the silicon concentrations, which is discussed as a consequence of chemical bonding and matrix effects. The hydrogen concentrations obtained by ERDA are typically about 30% higher than those estimated by FTIR, possibly due to the presence of non-bonded hydrogen in the film. (C) 1999 Elsevier Science B.V. All rights reserved.
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收藏
页码：188 / 191
页数：4
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