Investigation of the properties of Cr-doped CdZnS nanocrystals with the best IPCE (%) value

Our current study consisted of two basic motivations. In our first motivation, Cr-doped CdZnS nanocrystals with different Cr concentrations were synthesized on TiO2/FTO (fluorine-doped tin oxide) substrates using the successive ionic layer adsorption and reaction (SILAR) technique. The nanocrystals here were used as a sensitizer for photovoltaic measurements. The main purpose of this motivation was to determine the optimum Cr concentration with maximum IPCE (%) by making incident photon to electron conversion efficiency (IPCE) measurements. It was observed that Cr concentration with a maximum IPCE (%) value at 400 nm was found as 0.75%. Moreover, the crystallite size and energy band gap of Cr-doped CdZnS nanocrystals were calculated as 2.53 nm and 3.83 eV, respectively, due to the Cr doping metal. Thus, the results showed that Cr-doped metal effectively altered the photovoltaic, crystallite size, and energy bandgap value of the CdZnS host semiconductor.