Study of the new β-In2S3 containing Na thin films.: Part II:: Optical and electrical characterization of thin films

被引:56
作者
Barreau, N [1 ]
Bernède, JC [1 ]
Marsillac, S [1 ]
机构
[1] LPSE, Fac Sci & Tech Nantes, F-44322 Nantes 3, France
关键词
optical properties; electrical properties; physical vapor deposition processes; new materials; semiconducting materials; optoelectronical devices;
D O I
10.1016/S0022-0248(02)01243-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The optical and electrical properties of the new [In-16](Oh)[In(5.33-x)Na(3x)square(2.66-2x)](Td)S-32 (BINS) thin films have been studied. The determination of the optical band gap of films containing different rates of sodium has shown that it linearly increases from 2.10eV, when the films are pure beta-In2S3, to 2.95eV, when their sodium content corresponds to x = 0.9 i.e. [In-16](Oh)[In(4.4)Na(2.7)square(0.9)](Td)S-32 compound. This evolution of the band gap has been discussed in terms of In-S bond length and electronegativity of Na and In elements. All the BINS thin films have an n-type electrical conductivity, which decreases from 4 x 10(-7) to 10(-7) S cm(-1) when x increases from 0.05 to 0.9, respectively. The electrical conductivity of pure beta-In2S3 has been found around 2 x 10(-8) S cm(-1), which is lower than that of films containing sodium. The variation of the room conductivity of the films is related to the sodium distribution in the crystalline structure. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:51 / 56
页数:6
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