Phase-separation phenomenon of NiGePt alloy on n-Ge by microwave annealing

被引：2

作者：

Hsu, Chung-Chun ^{[1
]}

Lin, Kun-Lin ^{[2
]}

Chi, Wei-Chun ^{[1
]}

Chou, Chen-Han ^{[1
]}

Luo, Guang-Li ^{[2
]}

Lee, Yao-Jen ^{[2
]}

Chien, Chao-Hsin ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, 1001 Ta Hsueh Rd, Hsinchu 300, Taiwan

[2] Natl Nano Device Labs, 1001-1 Ta Hsueh Rd, Hsinchu 300, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 743卷

关键词：

Microwave-activated annealing; NiGePt; Phase-separation alloy; Schottky junction; MORPHOLOGICAL STABILITY; THERMAL-STABILITY; SI SUBSTRATE; GERMANOSILICIDE; GERMANIDE; FILMS; SOURCE/DRAIN; DIFFUSION; MOSFETS;

D O I：

10.1016/j.jallcom.2018.01.119

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

During the formation of distinct bilayer NiGePt alloy, a phase-separation phenomenon was observed using microwave annealing and structural engineering. The microstructures of bilayer NiGePt [PtGe(Ni)-NiGe(Pt)] alloys fabricated with 10-nm Ni and various thicknesses of Pt (5, 10, and 15 nm) were characterized. Within the same thermal budget as microwave annealing, the diffusion of Ni exhibited stronger alloy formation ability with Ge and drilled through the Pt layer without resistance. The higher diffusivity of Ni atoms dominated the diffusion of Ni through the Pt layer to form a stable crystalline layer, NiGe(Pt). Ge diffused outwardly toward the Pt layer to form a PtGe(Ni) layer. This special phenomenon of bilayer alloy formation was elucidated using nanobeam electron diffraction by transmission electron microscopy in conjunction with energy-dispersive spectrometry. Comparing the differences in metal alloys between microwave and rapid thermal annealing, microwave annealing formed a bilayer alloy more apparently than rapid thermal annealing. The results and electrical characteristics indicated that a thicker Pt layer for forming a bilayer NiGePt alloy with alloy separation could also effectively improve the leakage current of NiGePt [PtGe(Ni)- NiGe(Pt)]/n-Ge Schottky junctions. (c) 2018 Elsevier B.V. All rights reserved.

引用

页码：262 / 267

页数：6

共 28 条

[1] High-Performance Germanium p- and n-MOSFETs With NiGe Source/Drain [J].