Most industrial plasma processes are dependant upon the control of plasma properties for repeatable and reliable production. The speed of production and range of properties achieved depend on the degree of control. Process control involves all the aspects of the vacuum equipment, substrate preparation, plasma source condition, power supplies, process drift, valves (inputs/outputs), signal and data processing and the user's understanding and ability. In many cases, some of the processes which involve the manufacturing of interesting coating structures, require a precise control of the process in a reactive environment [S.J. Nadel, P. Greene, "High rate sputtering technology for throughput and quality", International Glass Review, Issue 3, 2001, p. 45. [5]]. Commonly in these circumstances the plasma is not stable if all the inputs and outputs of the system were to remain constant. The ideal situation is to move a process from set-point A to B in zero time and maintain the monitored signal with a fluctuation equal to zero. In a "real" process that's not possible but improvements in the time response and energy delivery could be achieved with an appropriate algorithm structure. In this paper an advanced multichannel reactive plasma gas control system is presented. The new controller offers both high-speed gas control combined with a very flexible control structure. The controller uses plasma emission monitoring, target voltage or any process sensor monitoring as the input into a high-speed control algorithm for gas input. The control algorithm and parameters can be tuned to different process requirements in order to optimize response times. (c) 2005 Elsevier B.V. All rights reserved.
