Improved resistive switching stability of Pt/ZnO/CoOx/ZnO/Pt structure for nonvolatile memory devices

被引：11

作者：

Chen, Guang ^{[1
]}

Song, Cheng ^{[1
]}

Pan, Feng ^{[1
]}

机构：

[1] Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

RARE METALS | 2013年 / 32卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Resistive random access memory; Conductive filaments; ZnO; CoOx; MAGNETIC-PROPERTIES; ZNO; MORPHOLOGY;

D O I：

10.1007/s12598-013-0080-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For Pt(Ag)/ZnO single-layer/Pt structure, random 10 formation and rupture of conductive filaments composed by oxygen vacancies or metallic ions often cause dispersion problems of resistive switching (RS) parameters, which is disadvantageous to devices application. In this study, ZnO/CoO (x) /ZnO (ZCZ) tri-layers were utilized as the switching layers to investigate their RS properties as compared with ZnO-based single-layer devices. It is interestingly noted that Pt/ZCZ/Pt devices show quite stable bipolar RS behaviors with little resistance value fluctuations compared to Ag/ZCZ/Pt devices and Pt(Ag)/ZnO/Pt devices, which minimize the dispersion of the resistances of RS. This highly stable RS effect of Pt/ZCZ/Pt structure would be promising for high density memory devices.

引用

页码：544 / 549

页数：6

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