Massive integration of inorganic nanowire-based structures on solid substrates for device applications

被引:13
|
作者
Heo, Kwang [2 ]
Kim, Cheol-Joo [1 ]
Jo, Moon-Ho [1 ]
Hong, Seunghun [2 ]
机构
[1] Pohang Inst Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang, Gyungbuk, South Korea
[2] Seoul Natl Univ, Dept Phys & Astron, Seoul, South Korea
关键词
ONE-DIMENSIONAL NANOSTRUCTURES; SILICON NANOWIRES; GE NANOWIRES; SEMICONDUCTOR NANOWIRES; CDSE NANOCRYSTALS; SILVER NANOWIRES; EPITAXIAL-GROWTH; ARRAYS; TEMPERATURE; GERMANIUM;
D O I
10.1039/b817136j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Inorganic nanowire-based devices have recently drawn extensive attention as one of the next-generation device architectures. Nevertheless, a lack of mass-production methods has been one of the major hurdles holding back the practical applications of such devices. Herein, we review three promising strategies for the massive assembly of inorganic nanowires for their device applications, which are topically selected: selective growth, selective assembly, and direct printing methods. The advantages and disadvantages of these methods are also discussed.
引用
收藏
页码:901 / 908
页数:8
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