ZnO based light emitting diodes growth and fabrication

被引：8

作者：

Pan, M. ^{[1
]}

Rondon, R. ^{[1
]}

Cloud, J. ^{[1
]}

Rengarajan, V. ^{[1
]}

Nemeth, W. ^{[1
]}

Valencia, A. ^{[1
]}

Gomez, J. ^{[1
]}

Spencer, N. ^{[1
]}

Nause, J. ^{[1
]}

机构：

[1] Cermet Inc, 1019 Collier Rd, Atlanta, GA 30318 USA

来源：

ZINC OXIDE MATERIALS AND DEVICES | 2006年 / 6122卷

关键词：

ZnO; MOCVD; plasma; thin film; LED;

D O I：

10.1117/12.659240

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO and N-doped ZnO thin films were grown by MOCVD on sapphire and ZnO substrates. Diethyl zinc and O-2 were used as sources for Zn and O, respectively. A specially designed plasma system was employed to produce atomic N dopant for in-sitti doping. Proper disk rotation speeds were found for ZnO growth on different size wafers. High crystal quality N-doped ZnO films were grown based on optimized growth conditions. Wet chemical etch of ZnO was investigated by using NH4Cl, and etch activation energy was calculated to be 463meV. Ohmic contact on N-doped ZnO film was achieved by using Ni/Au/Al multiple layers. ZnO based p-n junction has demonstrated rectification. Electroluminescence at about 384nm was obtained from ZnO based LED.

引用

页数：6

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