ZnO based light emitting diodes growth and fabrication

被引：8

作者：

Pan, M. ^{[1
]}

Rondon, R. ^{[1
]}

Cloud, J. ^{[1
]}

Rengarajan, V. ^{[1
]}

Nemeth, W. ^{[1
]}

Valencia, A. ^{[1
]}

Gomez, J. ^{[1
]}

Spencer, N. ^{[1
]}

Nause, J. ^{[1
]}

机构：

[1] Cermet Inc, 1019 Collier Rd, Atlanta, GA 30318 USA

来源：

ZINC OXIDE MATERIALS AND DEVICES | 2006年 / 6122卷

关键词：

ZnO; MOCVD; plasma; thin film; LED;

D O I：

10.1117/12.659240

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO and N-doped ZnO thin films were grown by MOCVD on sapphire and ZnO substrates. Diethyl zinc and O-2 were used as sources for Zn and O, respectively. A specially designed plasma system was employed to produce atomic N dopant for in-sitti doping. Proper disk rotation speeds were found for ZnO growth on different size wafers. High crystal quality N-doped ZnO films were grown based on optimized growth conditions. Wet chemical etch of ZnO was investigated by using NH4Cl, and etch activation energy was calculated to be 463meV. Ohmic contact on N-doped ZnO film was achieved by using Ni/Au/Al multiple layers. ZnO based p-n junction has demonstrated rectification. Electroluminescence at about 384nm was obtained from ZnO based LED.

引用

页数：6

共 50 条

[1] Fabrication of ZnO nanowire-based diodes and their light-emitting properties
Key Laboratory for Physics and Chemistry of Nanodevices, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
Wuli Xuebao, 2008, 2 (1141-1144):
[2] Fabrication of ZnO nanowire-based diodes and their light-emitting properties
Wang Yan-Xin
Zhang Qi-Feng
Sun Hui
Chang Yan-Ling
Wu Jin-Lei
ACTA PHYSICA SINICA, 2008, 57 (02) : 1141 - 1144
[3] NiO/ZnO light emitting diodes by solution-based growth
Xi, Y. Y.
Hsu, Y. F.
Djurisic, A. B.
Ng, A. M. C.
Chan, W. K.
Tam, H. L.
Cheah, K. W.
APPLIED PHYSICS LETTERS, 2008, 92 (11)
[4] Fabrication and characterization of single ZnO microwire Schottky light emitting diodes
Feng, Qiuju
Liu, Jiayuan
Lu, Jiayin
Mei, Yiying
Song, Zhe
Tao, Pengcheng
Pan, Dezhu
Yang, Yuqi
Li, Mengke
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 40 : 436 - 438
[5] Growth and fabrication of InGaNP-based yellow-red light emitting diodes
Odnoblyudov, V. A.
Tu, C. W.
APPLIED PHYSICS LETTERS, 2006, 89 (19)
[6] Fabrication of Nitrogen Doped p-ZnO and ZnO Light-Emitting Diodes on Sapphire
Wei, Z. P.
Lu, Y. M.
Shen, D. Z.
Zhang, Z. Z.
Yao, B.
Li, B. H.
Zhang, J. Y.
Zhao, D. X.
Fan, X. W.
Tang, Z. K.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (05) : 3038 - 3042
[7] Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes
Lee, Ching-Ting
MATERIALS, 2010, 3 (04) : 2218 - 2259
[8] Growth and Fabrication of Reliable n-ZnO/p-GaN Heterojunction Light-Emitting Diodes
Jeong, Seonghoon
Kim, Kyoung-Kook
Kim, Hyunsoo
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2015, 10 (02) : 260 - 264
[9] Quantum Dot Light Emitting Diodes Based on ZnO Nanoparticles
Tu, Ning
Kwok, Z. H. Eric
Lee, S. W. Ricky
2018 20TH INTERNATIONAL CONFERENCE ON ELECTRONIC MATERIALS AND PACKAGING (EMAP), 2018,
[10] Advances in ZnO-based materials for light emitting diodes
Pearton, S. J.
Ren, F.
CURRENT OPINION IN CHEMICAL ENGINEERING, 2014, 3 : 51 - 55

← 1 2 3 4 5 →