Ferromagnetism induced by defect complex in Co-doped ZnO

被引：53

作者：

Liu, En-Zuo ^{[1
]}

He, Yan

Jiang, J. Z.

机构：

[1] Zhejiang Univ, ICNSM, Hangzhou 310021, Zhejiang, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2995997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Al donor and O vacancy (V(O)) on the magnetic properties of Co-doped ZnO has been studied by first-principles calculations. It is found that only Al donor cannot induce ferromagnetism (FM) in Co-doped ZnO but can provide additional electrons, which results in the enhancement of Fermi level. The presence of V(O) makes the Co empty 3d-t(2g) minority state broadened, and a t(2g)-V(O) hybrid level at the conduction band minimum forms. The combination of Al donor and V(O) results in a charge transfer to the Co empty 3d-t(2g) minority states, which induces a strong carrier-mediated FM interaction. Our results give an explanation for the controversial magnetic properties of (Co, Al)-codoped ZnO reported in the literature. (C) 2008 American Institute of Physics.

引用

页数：3

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