Effects of the solvent polarity of a polymeric insulator on field-effect mobility in an organic thin-film transistor

被引：10

作者：

Kim, Hyeok ^{[1
]}

Bae, Jin-Hyuk ^{[2
]}

Horowitz, Gilles ^{[1
]}

Kim, Woo Young ^{[3
]}

Choi, Yoonseuk ^{[4
]}

机构：

[1] Univ Paris 07, ITODYS, CNRS, F-75205 Parks, France

[2] Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea

[3] Korea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea

[4] Hanbat Natl Univ, Dept Elect, 16-1 Dukmyung Dong, Taejon 305719, South Korea

来源：

SOLID-STATE ELECTRONICS | 2013年 / 81卷

基金：

新加坡国家研究基金会;

关键词：

Solvent polarity; Organic TFT; PVP; Field-effect mobility; GATE; TRANSPORT;

D O I：

10.1016/j.sse.2012.12.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated effects of the solvent polarity of a polymeric insulator on field-effect mobility in a pentacene used thin-film transistor (TFT). In our work, we used a poly(4-vinylphenol) (PVP) as a gate insulator to dissolve three different solvents. As the solvent polarity of the PVP solution is increased, the field-effect mobility is dramatically increased by a factor of five (from 0.30 cm(2)/Vs to 1.51 cm(2)/Vs). We found that an increase of polar solvents in polymeric insulators results in improved electrical properties in the organic TFTs. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：140 / 143

页数：4

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