Effect of feed rate on the production of nitrogen-doped graphene from liquid acetonitrile

被引:18
作者
Cui, Tongxiang [1 ]
Lv, Ruitao [2 ]
Huang, Zheng-Hong [1 ]
Zhu, Hongwei [3 ,4 ,5 ]
Kang, Feiyu [1 ,6 ]
Wang, Kunlin [3 ,4 ]
Wu, Dehai [3 ,4 ]
机构
[1] Tsinghua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China
[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[3] Tsinghua Univ, Minist Educ, Dept Mech Engn, Beijing 100084, Peoples R China
[4] Tsinghua Univ, Minist Educ, Key Lab Adv Mfg Mat Proc Technol, Beijing 100084, Peoples R China
[5] Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China
[6] Tsinghua Univ, Grad Sch Shenzhen, Shenzhen 518055, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; RAMAN-SPECTROSCOPY; BILAYER GRAPHENE; LAYER GRAPHENE; HIGH-QUALITY; FILMS; ETHANOL; SINGLE; COPPER;
D O I
10.1016/j.carbon.2012.03.038
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have investigated the production of nitrogen-doped graphene (NG) from liquid acetonitrile and demonstrated that there is a critical feed rate of acetonitrile for the growth of NG. Graphene sheets could be obtained at feed rate lower than 0.08 mL/min. While at 0.08 mL/mm or above, only polycrystalline carbon films could be obtained. Therefore, selective synthesis of NG or carbon films could be achieved by simply altering the feed rate of acetonitrile, which provides an effective way to control the growth of NG sheets. Furthermore, NG sheets (0.06 mL/min sample) and carbon films (0.08 mL/min sample) exhibit light transmittance of similar to 90% and 70% at 550 nm, and sheet resistance of similar to 1400 and 1000 Omega/sq, respectively, showing their potential applications in carbon-based nanoelectronics. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3659 / 3665
页数:7
相关论文
共 39 条
[1]   Graphene electrochemistry: an overview of potential applications [J].
Brownson, Dale A. C. ;
Banks, Craig E. .
ANALYST, 2010, 135 (11) :2768-2778
[2]   Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation [J].
Chae, Seung Jin ;
Guenes, Fethullah ;
Kim, Ki Kang ;
Kim, Eun Sung ;
Han, Gang Hee ;
Kim, Soo Min ;
Shin, Hyeon-Jin ;
Yoon, Seon-Mi ;
Choi, Jae-Young ;
Park, Min Ho ;
Yang, Cheol Woong ;
Pribat, Didier ;
Lee, Young Hee .
ADVANCED MATERIALS, 2009, 21 (22) :2328-+
[3]   Annealing a graphene oxide film to produce a free standing high conductive graphene film [J].
Chen, Cheng-Meng ;
Huang, Jia-Qi ;
Zhang, Qiang ;
Gong, Wen-Zhao ;
Yang, Quan-Hong ;
Wang, Mao-Zhang ;
Yang, Yong-Gang .
CARBON, 2012, 50 (02) :659-667
[4]   Synthesis of nitrogen-doped carbon thin films and their applications in solar cells [J].
Cui, Tongxiang ;
Lv, Ruitao ;
Huang, Zheng-Hong ;
Zhu, Hongwei ;
Zhang, Jiang ;
Li, Zhen ;
Jia, Yi ;
Kang, Feiyu ;
Wang, Kunlin ;
Wu, Dehai .
CARBON, 2011, 49 (15) :5022-5028
[5]   Effect of sulfur on enhancing nitrogen-doping and magnetic properties of carbon nanotubes [J].
Cui, Tongxiang ;
Lv, Ruitao ;
Huang, Zheng-hong ;
Kang, Feiyu ;
Wang, Kunlin ;
Wu, Dehai .
NANOSCALE RESEARCH LETTERS, 2011, 6 :1-6
[6]   Surface-enhanced Raman Scattering Study on 1D-2D Graphene-based Structures [J].
D'Urso, Luisa ;
Forte, Giuseppe ;
Russo, Paola ;
Caccamo, Carmela ;
Compagnini, Giuseppe ;
Puglisi, Orazio .
CARBON, 2011, 49 (10) :3149-3157
[7]  
Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]
[8]   Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects [J].
Ferrari, Andrea C. .
SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :47-57
[9]   A highly practical route for large-area, single layer graphene from liquid carbon sources such as benzene and methanol [J].
Gadipelli, Srinivas ;
Calizo, Irene ;
Ford, Jamie ;
Cheng, Guangjun ;
Walker, Angela R. Hight ;
Yildirim, Taner .
JOURNAL OF MATERIALS CHEMISTRY, 2011, 21 (40) :16057-16065
[10]   Epitaxial Graphene on Cu(111) [J].
Gao, Li ;
Guest, Jeffrey R. ;
Guisinger, Nathan P. .
NANO LETTERS, 2010, 10 (09) :3512-3516