Effect of growth parameters on photocatalytic properties of CuO nanowires fabricated by direct oxidation

被引：22

作者：

Farbod, Mansoor ^{[1
]}

Ghaffari, Narges Meamar ^{[1
]}

Kazeminezhad, Iraj ^{[1
]}

机构：

[1] Shahid Chamran Univ, Dept Phys, Ahvaz, Iran

来源：

MATERIALS LETTERS | 2012年 / 81卷

关键词：

Nanocrystalline materials; Semiconductors; Crystal growth;

D O I：

10.1016/j.matlet.2012.05.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuO nanowires were grown on Cu substrate by direct oxidation method. Different growth temperatures from 400 to 600 degrees C were investigated in order to find optimum growth conditions. The results showed that annealing the substrate at 400 degrees C for 4 h in air is suitable for CuO nanowire growth with average diameter of about 50 nm. However, annealing the substrate at 500 degrees C results in dense growth and relatively aligned nanowires. The alignment of nanowires improves by annealing at 600 degrees C but the denseness of nanowires reduces. The photocatalytic activities of CuO nanowires were studied by photocatalytic degradation of Congo red dye using a homemade photoreactor. The nanowires grown at 500 degrees C revealed the best photocatalytic performance. (C) 2012 Elsevier B.V. All rights reserved.

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页码：258 / 260

页数：3

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