Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

被引：56

作者：

Lee, Jung-Kyu ^{[1
,2
]}

Jung, Sunghun ^{[1
,2
]}

Park, Jinwon ^{[3
]}

Chung, Sung-Woong ^{[3
]}

Roh, Jae Sung ^{[3
]}

Hong, Sung-Joo ^{[3
]}

Cho, Il Hwan ^{[4
]}

Kwon, Hyuck-In ^{[5
]}

Park, Chan Hyeong ^{[6
]}

Park, Byung-Gook ^{[1
,2
]}

Lee, Jong-Ho ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Sch EECS, Seoul 151742, South Korea

[2] Seoul Natl Univ, ISRC, Seoul 151742, South Korea

[3] SK Hynix Inc, R&D Div, Kyonggi Do 467701, South Korea

[4] Myongji Univ, Dept Elect Engn, Yongin 449728, Kyeonggido, South Korea

[5] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea

[6] Kwangwoon Univ, Dept Elect & Commun Engn, Seoul 139701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期

关键词：

FILMS;

D O I：

10.1063/1.4751248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resistive-switching and current conduction mechanisms have been studied in TiN/Ti/TiOx/HfOx/TiN resistive-switching random access memories (RRAMs). From I-V characteristics and temperature measurement, thermionic emission is found to be the most appropriate mechanism representing the dominant current conduction in all the bias regions and resistance states. Low-frequency noise power spectrum is measured to analyze accurately the conduction mechanism, which corroborates the thermionic-emission. Also, using the migration of oxygen ions depending on the polarity of the applied field, we propose the resistive-switching model of a double-layered RRAM to explain the unique resistive-switching characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751248]

引用

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