GaN-based high-frequency devices and circuits: A Fraunhofer perspective

被引：10

作者：

Waltereit, Patrick ^{[1
]}

Bronner, Wolfgang ^{[1
]}

Quay, Ruediger ^{[1
]}

Dammann, Michael ^{[1
]}

Caesar, Markus ^{[1
]}

Mueller, Stefan ^{[1
]}

van Raay, Friedbert ^{[1
]}

Kiefer, Rudolf ^{[1
]}

Brueckner, Peter ^{[1
]}

Kuehn, Jutta ^{[1
]}

Musser, Markus ^{[1
]}

Kirste, Lutz ^{[1
]}

Haupt, Christian ^{[1
]}

Pletschen, Wilfried ^{[1
]}

Lim, Taek ^{[1
]}

Aidam, Rolf ^{[1
]}

Mikulla, Michael ^{[1
]}

Ambacher, Oliver ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 03期

关键词：

GaN; HEMT; MMIC; reliability; ELECTRON-MOBILITY TRANSISTORS; BUFFER LEAKAGE; ALGAN/GAN; GROWTH;

D O I：

10.1002/pssa.201100452

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the current status of our technology for GaN-based HEMTs and MMICs as well as results ranging from the L-band up to the W-band. Epitaxial growth is carried out on 4H-SiC(0001) substrates by both MOCVD and MBE. Processing is done using standard III-V equipment including both frontside and backside processing. For L-band power bars we arrive at output powers, efficiencies and gains beyond 100 W, 60% and 17 dB, all measured under cw conditions at 50 V drain bias. The X-band MMICs are characterized by a high efficiency above 40% for two-stage amplifiers. Towards mm-wave applications we have fabricated HEMTs with transit frequencies above 100 GHz and W-band MMICs delivering 0.5W/mm at 94 GHz with 7% PAE. First quaternary InAlGaN barriers show promising results for this new materials system. Reliability tests return a very good long-term stability of our devices even at an elevated channel temperature of 200 degrees C with an extrapolated lifetime of 5 x 10(5). Initial space capability tests including total ion dose radiation insensitivity, radiation displacement damage, hydrogen poisoning and single event effect are successfully passed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：491 / 496

页数：6

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