Plasmon satellites in valence-band photoemission spectroscopy Ab initio study of the photon-energy dependence in semiconductors

被引：24

作者：

Guzzo, M. ^{[1
]}

Kas, J. J. ^{[2
]}

Sottile, F. ^{[1
]}

Silly, M. G. ^{[3
]}

Sirotti, F. ^{[3
]}

Rehr, J. J. ^{[2
]}

Reining, L. ^{[1
]}

机构：

[1] Ecole Polytech, CNRS, Solides Irradies Lab, CEA DSM, F-91128 Palaiseau, France

[2] Univ Washington, Dept Phys, Seattle, WA 98195 USA

[3] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France

来源：

EUROPEAN PHYSICAL JOURNAL B | 2012年 / 85卷 / 09期

关键词：

QUASI-PARTICLE;

D O I：

10.1140/epjb/e2012-30267-y

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present experimental data and theoretical results for valence-band satellites in semiconductors, using the prototypical example of bulk silicon. In a previous publication we introduced a new approach that allows us to describe satellites in valence photoemission spectroscopy, in good agreement with experiment. Here we give more details; we show how the the spectra change with photon energy, and how the theory explains this behaviour. We also describe how we include several effects which are important to obtain a correct comparison between theory and experiment, such as secondary electrons and photon cross sections. In particular the inclusion of extrinsic losses and their dependence on the photon energy are key to the description of the energy dependence of spectra.

引用

页数：7

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