4H-SiC epitaxial growth on 2° off-axis substrates using trichlorosilane (TCS)

被引：6

作者：

Aigo, T. ^{[1
]}

Ito, W. ^{[1
]}

Tsuge, H. ^{[1
]}

Yashiro, H. ^{[1
]}

Katsuno, M. ^{[1
]}

Fujimoto, T. ^{[1
]}

Ohashi, W. ^{[1
]}

机构：

[1] Nippon Steel Corp Ltd, Adv Technol Res Labs, Futtsu, Chiba 2938511, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

Morphology; trichlorosilane; triangle defect; stacking fault; photoluminescence; STACKING-FAULTS;

D O I：

10.4028/www.scientific.net/MSF.717-720.101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

4H-SiC epitaxial growth on 2 degrees off-axis substrates using trichlorosilane (TCS) is presented. Good surface morphology was obtained for epilayers with C/Si ratios of 0.6 and 0.8 at a growth temperature of 1600 degrees C. The triangle defect density was reduced to a level below 5 cm(-2) at 1600 degrees C and below 1 cm(-2) at 1625 degrees C for a C/Si ratio of 0.8. Photoluminescence (PL) measurements were carried out with band-pass filters of 420 nm, 460 nm, and 480 nm to detect stacking faults. A stacking fault density of below 5 cm(-2) was achieved at 1600 degrees C and 1625 degrees C with a C/Si ratio of 0.8. The optimal conditions for TCS growth were a C/Si ratio of 0.8 and a growth temperature of 1600 degrees C. The evaluation of stacking faults and etch pit density indicated that the use of 2 degrees off-axis substrates and TCS is effective for reducing basal plane dislocations. Comparing these results to those using silane (SiH4) with HCl added, it was demonstrated that TCS is much more suitable for obtaining high-quality epilayers on 2 degrees off-axis substrates.

引用

页码：101 / 104

页数：4

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