Direct measurement of the direction of interface motion in the oxidation of metals and covalent solids -: Al(111) and Si(100) oxidation with O2 at 300 K

被引：12
作者：
Guise, O
Levy, J
Yates, JT [1 ]
机构：
[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA
[2] Univ Pittsburgh, Dept Chem, Ctr Surface Sci, Pittsburgh, PA 15260 USA
来源：
THIN SOLID FILMS | 2006年 / 496卷 / 02期
关键词：
oxide films; film growth; Mott-Cabrera theory; interface;
D O I：
10.1016/j.tsf.2005.08.358
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Four point probe measurements of the Surface electrical resistance at an oxide film-metal interface and at an oxide-film semiconductor interface have shown with A sensitivity that the direction of the buried interface motion during oxide film growth is opposite in the two cases in accordance with the Mott-Cabrera theory. During the formation of amorphous Al2O3 layers on Al(I 11) at 300 K, outward film growth occurs due to Al3+ ion transport from the metal into the growing oxide film. For the fort-nation of amorphous SiO2 layers on Si(100) at 300 K, oxygen transport occurs inwardly into the Si lattice as the oxide film forms. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：426 / 430
页数：5
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