Paramagnetic defects in electron-irradiated yttria-stabilized zirconia: Effect of yttria content

被引:37
作者
Costantini, Jean-Marc [1 ]
Beuneu, Francois [2 ]
Morrison-Smith, Sarah [3 ]
Devanathan, Ram [4 ]
Weber, William J. [5 ,6 ]
机构
[1] CEA, DMN, SRMA, F-91191 Gif Sur Yvette, France
[2] Ecole Polytech, CNRS, CEA, LSI, F-91128 Palaiseau, France
[3] Montana State Univ, Bozeman, MT 59717 USA
[4] Pacific NW Natl Lab, Richland, WA 99352 USA
[5] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
[6] Univ Tennessee, Knoxville, TN 37996 USA
关键词
THRESHOLD DISPLACEMENT ENERGIES; CHARGED-PARTICLE IRRADIATIONS; MOLECULAR-DYNAMICS SIMULATION; COMPUTER-SIMULATION; CERAMICS; CENTERS; IONS; UO2; EPR; MGO;
D O I
10.1063/1.3666062
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the effect of the yttria content on the paramagnetic centers in electron-irradiated yttria-stabilized zirconia (ZrO2: Y3+) or YSZ. Single crystals with 9.5 mol % or 18 mol % Y2O3 were irradiated with electrons of 1.0, 1.5, 2.0, and 2.5 MeV. The paramagnetic center production was studied by X-band electron paramagnetic resonance (EPR) spectroscopy. The same paramagnetic centers were identified for both chemical compositions, namely two electron centers, i.e., (i) F+-type centers (involving singly ionized oxygen vacancies), and (ii) so-called T centers (Zr3+ in a trigonal symmetry site), as well as hole-centers. A strong effect is observed on the production of hole-centers that is strongly enhanced when doubling the yttria content. However, no striking effect is found on the electron centers (except the enhancement of an extra line associated with the F+-type centers). It is concluded that hole-centers are produced by inelastic interactions, whereas F+-type centers are produced by elastic collisions with no effect of the yttria content on the defect production rate. In the latter case, the threshold displacement energy (E-d) of oxygen is estimated from the electron-energy dependence of the F+-type center production rate, with no significant effect of the yttria content on E-d. An E-d value larger than 120 eV is found. This is supported by classical molecular dynamics (MD) simulations with a Buckingham-type potential that show E-d values for Y and O are likely to be in excess of 200 eV. Due to the difficulty in displacing O or Y atoms, the radiation-induced defects may alternatively be a result of Zr atom displacements for E-d = 80 +/- 1eV with subsequent defect rearrangement. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3666062]
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页数:9
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