Paramagnetic defects in electron-irradiated yttria-stabilized zirconia: Effect of yttria content

被引:37
作者
Costantini, Jean-Marc [1 ]
Beuneu, Francois [2 ]
Morrison-Smith, Sarah [3 ]
Devanathan, Ram [4 ]
Weber, William J. [5 ,6 ]
机构
[1] CEA, DMN, SRMA, F-91191 Gif Sur Yvette, France
[2] Ecole Polytech, CNRS, CEA, LSI, F-91128 Palaiseau, France
[3] Montana State Univ, Bozeman, MT 59717 USA
[4] Pacific NW Natl Lab, Richland, WA 99352 USA
[5] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
[6] Univ Tennessee, Knoxville, TN 37996 USA
关键词
THRESHOLD DISPLACEMENT ENERGIES; CHARGED-PARTICLE IRRADIATIONS; MOLECULAR-DYNAMICS SIMULATION; COMPUTER-SIMULATION; CERAMICS; CENTERS; IONS; UO2; EPR; MGO;
D O I
10.1063/1.3666062
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the effect of the yttria content on the paramagnetic centers in electron-irradiated yttria-stabilized zirconia (ZrO2: Y3+) or YSZ. Single crystals with 9.5 mol % or 18 mol % Y2O3 were irradiated with electrons of 1.0, 1.5, 2.0, and 2.5 MeV. The paramagnetic center production was studied by X-band electron paramagnetic resonance (EPR) spectroscopy. The same paramagnetic centers were identified for both chemical compositions, namely two electron centers, i.e., (i) F+-type centers (involving singly ionized oxygen vacancies), and (ii) so-called T centers (Zr3+ in a trigonal symmetry site), as well as hole-centers. A strong effect is observed on the production of hole-centers that is strongly enhanced when doubling the yttria content. However, no striking effect is found on the electron centers (except the enhancement of an extra line associated with the F+-type centers). It is concluded that hole-centers are produced by inelastic interactions, whereas F+-type centers are produced by elastic collisions with no effect of the yttria content on the defect production rate. In the latter case, the threshold displacement energy (E-d) of oxygen is estimated from the electron-energy dependence of the F+-type center production rate, with no significant effect of the yttria content on E-d. An E-d value larger than 120 eV is found. This is supported by classical molecular dynamics (MD) simulations with a Buckingham-type potential that show E-d values for Y and O are likely to be in excess of 200 eV. Due to the difficulty in displacing O or Y atoms, the radiation-induced defects may alternatively be a result of Zr atom displacements for E-d = 80 +/- 1eV with subsequent defect rearrangement. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3666062]
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页数:9
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共 43 条
[1]  
[Anonymous], POINT DEFECTS SOLIDS
[2]  
[Anonymous], 1984, 37 ICRU
[3]   EPR STUDY OF ELECTRON TRAPS IN X-RAY-IRRADIATED YTTRIA-STABILIZED ZIRCONIA [J].
AZZONI, CB ;
PALEARI, A .
PHYSICAL REVIEW B, 1989, 40 (10) :6518-6522
[4]   EFFECTS OF YTTRIA CONCENTRATION ON THE EPR SIGNAL IN X-RAY-IRRADIATED YTTRIA-STABILIZED ZIRCONIA [J].
AZZONI, CB ;
PALEARI, A .
PHYSICAL REVIEW B, 1989, 40 (13) :9333-9335
[5]   SEVENFOLD-COORDINATED AND SIXFOLD-COORDINATED ZR-3+ IONS IN CUBIC STABILIZED ZIRCONIA - CRYSTAL-FIELD APPROACH [J].
AZZONI, CB ;
PALEARI, A .
PHYSICAL REVIEW B, 1991, 44 (13) :6858-6863
[6]   DISORDER-INDUCED OPTICAL AND PARAMAGNETIC PROPERTIES IN ZIRCONIUM DIOXIDE - ROLE OF LOW-SYMMETRY CRYSTAL FIELDS [J].
AZZONI, CB ;
BOLIS, L ;
PALEARI, A ;
SAMOGGIA, G ;
SCARDINA, F .
PHYSICAL REVIEW B, 1995, 51 (22) :15942-15946
[7]   ESR CENTERS IN REDUCED STABILIZED ZIRCONIA [J].
BENMICHAEL, R ;
TANNHAUSER, DS ;
GENOSSAR, J .
PHYSICAL REVIEW B, 1991, 43 (10) :7395-7404
[8]   COLOUR CENTRES IN ELECTRON IRRADIATED MGO [J].
CHEN, Y ;
TRUEBLOO.DL ;
SCHOW, OE ;
TOHVER, HT .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (12) :2501-&
[9]   PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1965, 138 (2A) :A555-&
[10]   Threshold displacement energy in yttria-stabilized zirconia [J].
Costantini, Jean-Marc ;
Beuneu, Francois .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 3, 2007, 4 (03) :1258-+