Impact of Sb Composition on Strain Profile of GaAs1-xSbx Capped InAs Quantum Dots

被引：10
作者：
Krishna, Jhuma Saha [1 ]
Panda, Debiprasad [2 ]
Chakrabarti, Subhananda [2 ]
机构：
[1] Indian Inst Technol, Dept Ctr Res Nanotechnol & Sci, Mumbai 400076, Maharashtra, India
[2] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2019年 / 18卷
关键词：
Biaxial; hydrostatic; probability density; quantum dots; strain; ELECTRONIC-STRUCTURE; LIGHT-EMISSION; GAASSB; LAYER; PHOTOLUMINESCENCE; WAVELENGTH;
D O I：
10.1109/TNANO.2019.2897709
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detail theoretical investigation on strain distribution of InAs quantum dot (QD) capped with GaAs1-xSbx has been carried out. The transition from type-I to type-II with varying Sb composition has been observed and demonstrated in terms of energy band profile and electron-hole probability density function. The effect of Sb composition on hydrostatic and biaxial strain and its outcome on optical properties has been analyzed in this study. The overall strain distribution was found to be minimum in QD heterostructures with Sb > 14%, which would improve carrier confinement and result in longer wavelength emission. The study of strain profile inside QD heterostructures would facilitate the researchers toward optimized designing of strain-coupled QD based devices, which could be utilized in infrared photodetector and quantum communication applications.
引用
收藏
页码：234 / 239
页数：6
相关论文
共 24 条
  • [1] Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures
    Adhikary, S.
    Halder, N.
    Chakrabarti, S.
    Majumdar, S.
    Ray, S. K.
    Herrera, M.
    Bonds, M.
    Browning, N. D.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2010, 312 (05) : 724 - 729
  • [2] A multicolor, broadband (5-20 μm), quaternary-capped InAs/GaAs quantum dot infrared photodetector
    Adhikary, Sourav
    Aytac, Yigit
    Meesala, Srujan
    Wolde, Seyoum
    Perera, A. G. Unil
    Chakrabarti, Subhananda
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (26)
  • [3] Strong photoluminescence and laser operation of InAs quantum dots covered by a GaAsSb strain-reducing layer
    Akahane, K
    Yamamoto, N
    Gozu, S
    Ohtani, N
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4) : 395 - 399
  • [4] Analysis of InAs/GaAs quantum dot solar cells using Suns-Voc measurements
    Beattie, N. S.
    Zoppi, G.
    See, P.
    Farrer, I.
    Duchamp, M.
    Morrison, D. J.
    Miles, R. W.
    Ritchie, D. A.
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 130 : 241 - 245
  • [5] Quantum Dots and Their Multimodal Applications: A Review
    Bera, Debasis
    Qian, Lei
    Tseng, Teng-Kuan
    Holloway, Paul H.
    [J]. MATERIALS, 2010, 3 (04): : 2260 - 2345
  • [6] Modeling of semiconductor nanostructures with nextnano3
    Birner, S.
    Hackenbuchner, S.
    Sabathil, M.
    Zandler, G.
    Majewski, J. A.
    Andlauer, T.
    Zibold, T.
    Morschl, R.
    Trellakis, A.
    Vogl, P.
    [J]. ACTA PHYSICA POLONICA A, 2006, 110 (02) : 111 - 124
  • [7] High-performance, long-wave (∼10.2 μm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping
    Chakrabarti, Subhananda
    Adhikary, Sourav
    Halder, Nilanjan
    Aytac, Yigit
    Perera, A. G. U.
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (18)
  • [8] Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots
    Chen, ZH
    Kim, ET
    Madhukar, A
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (14) : 2490 - 2492
  • [9] One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers
    Ghadi, Hemant
    Agarwal, Akshay
    Adhikary, Sourav
    Agawane, Jay
    Mandal, Arjun
    Chakrabarti, Subhananda
    Pendyala, Naresh Babu
    Prajapati, Sachin
    [J]. THIN SOLID FILMS, 2014, 566 : 1 - 4
  • [10] Calculations of the electronic structure of strained InAs quantum dots in InP
    Holm, M
    Pistol, ME
    Pryor, C
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (02) : 932 - 936
123