Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt

被引：44

作者：

Daikoku, H. ^{[1
]}

Kado, M. ^{[1
]}

Sakamoto, H. ^{[1
]}

Suzuki, H. ^{[1
]}

Bessho, T. ^{[1
]}

Kusunoki, K. ^{[2
]}

Yashiro, N. ^{[2
]}

Okada, N. ^{[2
]}

Moriguchi, K. ^{[2
]}

Kamei, K. ^{[2
]}

机构：

[1] Toyota Motor Co Ltd, Higashifuji Tech Ctr, 1200 Mishuku, Shizuoka 4101193, Japan

[2] Sumitomo Met Ind Ltd, Corp Res & Dev Labs, Amagasaki, Hyogo 6600891, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

Solution growth; 4H SiC; Meniscus; SILICON-CARBIDE;

D O I：

10.4028/www.scientific.net/MSF.717-720.61

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from -22 degrees to 61 degrees by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.

引用

页码：61 / +

页数：2

共 7 条

[1] High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth using Si-Cr Based Melt [J].

Danno, K. ;

Saitoh, H. ;

Seki, A. ;

Daikoku, H. ;

Fujiwara, Y. ;

Ishii, T. ;

Sakamoto, H. ;

Kawai, Y. .

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 :13-16

[2] GROWTH OF SILICON-CARBIDE FROM LIQUID SILICON BY A TRAVELLING HEATER METHOD [J].

GILLESSEN, K ;

VONMUNCH, W .

JOURNAL OF CRYSTAL GROWTH, 1973, 19 (04) :263-268

[3] FLUX GROWTH OF LARGE CRYSTALS BY ACCELERATED CRUCIBLE-ROTATION TECHNIQUE [J].

SCHEEL, HJ ;

SCHULZDU.EO .

JOURNAL OF CRYSTAL GROWTH, 1971, 8 (03) :304-&

[4] INFLUENCE OF SURFACE-ENERGY ON THE GROWTH OF 6H-SIC AND 4H-SIC POLYTYPES BY SUBLIMATION [J].

STEIN, RA ;

LANIG, P ;

LEIBENZEDER, S .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 11 (1-4) :69-71

[5]

Yakimova R, 1996, INST PHYS CONF SER, V142, P101

[6] Solution growth and crystallinity characterization of bulk 6H-SiC [J].

Yashiro, N. ;

Kusunoki, K. ;

Kamei, K. ;

Yauchi, A. .

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 :33-36

[7] Historical overview of silicon crystal pulling development [J].

Zulehner, W .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3) :7-15

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