Main effects analysis of graphene grown by chemical vapor deposition using orthogonal arrays

被引：0

作者：

Simsek, Baris ^{[1
]}

Dilmac, Omer Faruk ^{[1
]}

机构：

[1] Cankiri Karatekin Univ, Uluyazi Kampusu, TR-18100 Merkez, Cankiri, Turkey

来源：

JOURNAL OF THE FACULTY OF ENGINEERING AND ARCHITECTURE OF GAZI UNIVERSITY | 2018年 / 33卷 / 02期

关键词：

Main effect analysis; graphene synthesis; chemical vapor deposition; orthogonal arrays; product design; COPPER; GRAPHITE; QUALITY; FILMS;

D O I：

10.17341/gazimmfd.416373

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, main effects analysis of graphene grown by chemical vapor deposition methodology was performed using orthogonal arrays. For this purpose, the main responses were selected as the ID/IG value representing graphene defectiveness and I2D/IG value representing graphene thickness in the synthesis of graphene by Chemical Vapor Deposition methodology using ethanol and acetylene. The most effective parameters on ID/IG (antagonistically) and I2D/IG (synergistically) values were determined as reactor pressure and cooling rate for graphene synthesis with the use of ethanol. The most effective factors on the values of ID/IG (synergistically) and I2D/IG (antagonistically) were determined as the annealing time, the growth process acetylene flow rate, and the growth process hydrogen flow rate in the decomposition of acetylene. Optimum operating parameters were found as 400 mTorr for reactor pressure, 10 minutes for growth time, and low cooling rate (without fan) in the synthesis of graphene by chemical vapor deposition process using ethanol; 1000 degrees C for the annealing temperature, 10 minutes for the annealing time, 1 sccm for the growth process acetylene flow rate and 6 sccm for the growth process hydrogen flow rate in the synthesis of graphene by chemical vapor deposition using acetylene, respectively. When the values of ID/IG and I2D/IG were analyzed, it has been concluded that the synthesized graphene samples using ethanol, are produced with lower variance, allow us for better quality of graphene production.

引用

页码：627 / 640

页数：14

共 39 条

[1] Graphene synthesis on Fe foil using thermal CVD [J].

An, Hyosub ;

Lee, Won-Jun ;

Jung, Jongwan .

CURRENT APPLIED PHYSICS, 2011, 11 (04) :S81-S85

[2]

[Anonymous], THESIS

[3] Effect of dry oxidation on the energy gap and chemical composition of CVD graphene on nickel [J].

Aria, Adrianus I. ;

Gani, Adi W. ;

Gharib, Morteza .

APPLIED SURFACE SCIENCE, 2014, 293 :1-11

[4] Interface and strain effects on the fabrication of suspended CVD graphene devices [J].

Aydin, O. I. ;

Hallam, T. ;

Thomassin, J. L. ;

Mouis, M. ;

Duesberg, G. S. .

SOLID-STATE ELECTRONICS, 2015, 108 :75-83

[5] Development of a decision support system to select materials for pressure vessels [J].

Balci, Arif ;

Yurdakul, Mustafa ;

Ic, Yusuf Tansel .

JOURNAL OF THE FACULTY OF ENGINEERING AND ARCHITECTURE OF GAZI UNIVERSITY, 2018, 33 (01) :115-125

[6] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[7] Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst [J].

Bhaviripudi, Sreekar ;

Jia, Xiaoting ;

Dresselhaus, Mildred S. ;

Kong, Jing .

NANO LETTERS, 2010, 10 (10) :4128-4133

[8] Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films [J].

Charrier, A ;

Coati, A ;

Argunova, T ;

Thibaudau, F ;

Garreau, Y ;

Pinchaux, R ;

Forbeaux, I ;

Debever, JM ;

Sauvage-Simkin, M ;

Themlin, JM .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2479-2484

[9] Rapid growth of single-layer graphene on the insulating substrates by thermal CVD [J].

Chen, C. Y. ;

Dai, D. ;

Chen, G. X. ;

Yu, J. H. ;

Nishimura, K. ;

Lin, C. -T. ;

Jiang, N. ;

Zhan, Z. L. .

APPLIED SURFACE SCIENCE, 2015, 346 :41-45

[10] Effects of acetylene flow rate and processing temperature on graphene films grown by thermal chemical vapor deposition [J].

Chen, Chih-Sheng ;

Hsieh, Chien-Kuo .

THIN SOLID FILMS, 2015, 584 :265-269

← 1 2 3 4 →