High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector

被引：19

作者：

Guo, Hao ^{[1
,2
]}

Zhang, Xiong ^{[1
]}

Chen, Hongjun ^{[1
]}

Zhang, Peiyuan ^{[1
]}

Liu, Honggang ^{[2
]}

Chang, Hudong ^{[2
]}

Zhao, Wei ^{[2
]}

Liao, Qinghua ^{[3
]}

Cui, Yiping ^{[1
]}

机构：

[1] Southeast Univ, Adv Photon Ctr, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China

[2] Chinese Acad Sci, Microwave Device & IC Dept, Inst Microelect, Beijing 100029, Peoples R China

[3] Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 18期

关键词：

LIGHT-EMITTING-DIODES; EXTRACTION ENHANCEMENT; SURFACE; NITRIDE; OUTPUT; IMPROVEMENT; EFFICIENCY;

D O I：

10.1364/OE.21.021456

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al2O3 layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO2/Al2O3 passivation layers, the LED with the patterned composite SiO2/Al2O3 passivation layers and Ag mirror + 3-pair TiO2/SiO2 DBR backside reflector, and the LED with the patterned composite SiO2/Al2O3 passivation layer and Ag mirror + 3-pair ALD-grown TiO2/Al2O3 DBR backside reflector as compared with the conventional LED only with a single SiO2 passivation layer, respectively. (C) 2013 Optical Society of America

引用

页码：21456 / 21465

页数：10

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