PZT Thin Films Synthesis by Sol-Gel Method and Study of Local Ferroelectric Properties

被引：2

作者：

Silibin, M. V. ^{[1
]}

Dronov, A. A. ^{[1
]}

Gavrilov, S. A. ^{[1
]}

Smirnov, V. V. ^{[1
]}

Kiselev, D. A. ^{[2
]}

Malinkovich, M. D. ^{[2
]}

Parkhomenko, Yu. N. ^{[2
]}

机构：

[1] Natl Res Univ Elect Technol MIET, Moscow 124498, Russia

[2] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia

来源：

FERROELECTRICS | 2013年 / 442卷 / 01期

关键词：

PZT thin films; sol-gel method; ferroelectricity; domain wall; scanning probe microscopy;

D O I：

10.1080/00150193.2013.776433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper scanning probe microscopy investigations of surface morphology and local ferroelectric properties of sol-gel deposited PZT thin films are presented. It is shown that the films have sufficiently low surface roughness about 2 nm and small grain size about 20 nm. Possibility of the film polarization by applying both positive and negative DC voltage between the SPM probe and the sample is demonstrated. Additionally, times of residual piezoresponse signal relaxation are measured and domain wall velocity for the PZT films is calculated.

引用

页码：95 / 100

页数：6

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