Electrical characteristics of Al2O3/TiO2/Al2O3 prepared by atomic layer deposition on (NH4)2S-treated GaAs

被引：6
作者：
Yen, Chih-Feng [1 ]
Lee, Ming-Kwei [1 ]
Lee, Jung-Chan [2 ]
机构：
[1] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2014年 / 92卷
关键词：
Atomic layer deposition; Al2O3; TiO2; (NH4)(2)S; GaAs; CAPACITANCE-VOLTAGE MEASUREMENTS; PASSIVATION; SURFACE; TIO2; OXIDES; MOSFET;
D O I：
10.1016/j.sse.2013.10.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical characteristics of atomic layer deposited (ALD) Al2O3/TiO2/Al2O3 on (NH4)(2)S treated GaAs MOS capacitor were studied. The electrical characteristics were improved from the reduction of native oxides and sulfur passivation on GaAs by (NH4)(2)S treatment. The top high bandgap ALD-Al2O3 can further reduce the thermionic emission, and the bottom ALD-Al2O3 improves the interface state density by the self-cleaning. The high dielectric constant TiO2 is used to lower the equivalent oxide thickness. The leakage currents can reach 8.3 x 10(-9) and 2.2 x 10(-7) A/cm(2) at +/- 2 MV/cm, respectively. The interface state density is 3.11 x 10(11) cm(-2)ev(-1) at the energy of about 0.57 eV from the edge of the valence band. (C) 2013 Elsevier Ltd. All rights reserved.
引用
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页码：1 / 4
页数：4
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