Valley spin-acoustic resonance in MoS2 monolayers

被引:4
作者
Sonowal, K. [1 ,2 ]
V. Boev, D.
Kalameitsev, A. V. [3 ]
Kovalev, V. M. [3 ,4 ]
Savenko, I. G. [1 ,2 ]
机构
[1] Inst Basic Sci IBS, Ctr Theoret Phys Complex Syst, Daejeon 34126, South Korea
[2] Korea Univ Sci & Technol UST, Basic Sci Program, Daejeon 34113, South Korea
[3] Rzhanov Inst Semicond Phys, Siberian Branch Russian Acad Sci, Novosibirsk 630090, Russia
[4] Novosibirsk State Tech Univ, Novosibirsk 630073, Russia
关键词
PARAMAGNETIC-RESONANCE; ABSORPTION;
D O I
10.1103/PhysRevB.106.155426
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The band structure of a monolayer MoS2 comprises spin-split subbands, owing to the mutual presence of broken inversion symmetry and strong spin-orbit coupling. In the conduction band, spin-valley coupled subbands cross each other at finite momenta, and they are valley degenerate. When exposed to surface acoustic waves, the emerging strain-induced effective magnetic fields can give rise to spin-flip transitions between the spin-split subbands in the vicinity of the subband crossing point, resulting in the emergence of a spin-acoustic resonance and the acoustoelectric current. Resonance peaks occur at acoustic frequencies of gigahertz range in the vicinity of the subband crossing point. An external magnetic field breaks the valley degeneracy, resulting in the valleyselective splitting of spin-acoustic resonances, both in surface acoustic wave absorption and acoustoelectric current.
引用
收藏
页数:9
相关论文
共 50 条
[41]   Optical identification of layered MoS2 via the characteristic matrix method [J].
Li, Yuanxin ;
Dong, Ningning ;
Zhang, Saifeng ;
Wang, Kangpeng ;
Zhang, Long ;
Wang, Jun .
NANOSCALE, 2016, 8 (02) :1210-1215
[42]   First principle study of multilayered graphene/MoS2 heterostructures for photodetectors [J].
Mustafa, Hina ;
Irfan, Muhammad ;
Sattar, Abdul ;
Amjad, Raja Junaid ;
Latif, Hamid ;
Usman, Arslan ;
Ahmad, M. Ashfaq ;
Qin, Shengyong .
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2023, 289
[43]   Design of hybrid MoS2/photonic devices compatible with technological constraints [J].
Dory, Jean-Baptiste ;
Gauthier-Lafaye, Olivier ;
Dubreuil, Pascal ;
Massiot, Ines ;
Calvez, Stephane ;
Mlayah, Adnen .
MATERIALS RESEARCH EXPRESS, 2022, 9 (04)
[44]   Enhancement of Photovoltaic Response in Multilayer MoS2 Induced by Plasma Doping [J].
Wi, Sungjin ;
Kim, Hyunsoo ;
Chen, Mikai ;
Nam, Hongsuk ;
Guo, L. Jay ;
Meyhofer, Edgar ;
Liang, Xiaogan .
ACS NANO, 2014, 8 (05) :5270-5281
[45]   Sequential structural and optical evolution of MoS2 by chemical synthesis and exfoliation [J].
Kim, Ju Hwan ;
Kim, Jungkil ;
Oh, Si Duck ;
Kim, Sung ;
Choi, Suk-Ho .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 66 (12) :1852-1855
[46]   Nonlinear Optical Properties of Vertically-Aligned MoS2 Nanosheets [J].
Rahmati, Bahareh ;
Ghayeb-Zamharir, Sara ;
Karimzadeh, Rouhollha ;
Mohseni, Seyed Majid .
JOURNAL OF ELECTRONIC MATERIALS, 2021, 50 (06) :3645-3651
[47]   Single MoS2 Nanotube Experimental Optical Extinction Cross Section [J].
Colosimo, Alessia ;
Crut, Aurelien ;
Lascoux, Noelle ;
Panais, Clement ;
Casto, Alessandro ;
Vialla, Fabien ;
Demontis, Valeria ;
Martini, Leonardo ;
Rosi, Paolo ;
Rotunno, Enzo ;
Gazzadi, Gian Carlo ;
Beleggia, Marco ;
Krishnappa, Manjunath ;
Zak, Alla ;
Beltram, Fabio ;
Rossella, Francesco ;
Vallee, Fabrice ;
Del Fatti, Natalia ;
Banfi, Francesco ;
Maioli, Paolo .
JOURNAL OF PHYSICAL CHEMISTRY C, 2025, 129 (10) :5086-5094
[48]   Out-of-plane electron transport in finite layer MoS2 [J].
Holzapfel, R. ;
Weber, J. ;
Lukashev, P. V. ;
Stollenwerk, A. J. .
JOURNAL OF APPLIED PHYSICS, 2018, 123 (17)
[49]   Optoelectronic Properties of MoS2 in Proximity to Carrier Selective Metal Oxides [J].
Lattyak, Colleen ;
Vehse, Martin ;
Gonzalez, Marco A. ;
Pareek, Devendra ;
Guetay, Levent ;
Schaefer, Sascha ;
Agert, Carsten .
ADVANCED OPTICAL MATERIALS, 2022, 10 (09)
[50]   Fabrication of an Electrochemical Sensor for NOx Based on Ionic Liquids and MoS2 [J].
Mao, Xuyan ;
Wu, Maocheng ;
Xu, Xiangyu ;
Jiang, Liang ;
Yan, Jie ;
Du, Zhongyu ;
Li, Jianjun ;
Hou, Shifeng .
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2018, 13 (11) :11038-11048