Properties of (200) oriented, highly conductive SnO2 thin films by chemical spray pyrolysis from non-aqueous medium: Effect of antimony doping

被引:53
|
作者
Yadav, Abhijit A. [1 ]
Pawar, S. C. [1 ]
Patil, D. H. [1 ]
Ghogare, M. D. [1 ]
机构
[1] Rajarshi Shahu Mahavidyalaya, Dept Phys Elect & Photon, Thin Film Phys Lab, Latur 413512, MS, India
关键词
Thin films; Chemical synthesis; Electrical transport; X-ray diffraction; DOPED TIN OXIDE; OPTOELECTRONIC PROPERTIES; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; DEPOSITION; PHOTOLUMINESCENCE; DEFECTS; SURFACE; GROWTH; ZN;
D O I
10.1016/j.jallcom.2015.08.197
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Recently metal oxide thin films are extensively investigated because of their potential applications in solar energy conversion. In the present paper, Transparent conducting antimony doped tin oxide (Sb: SnO2) thin films have been deposited by spray pyrolysis technique at various antimony doping concentrations from non-aqueous solvent Propan-2-ol. XRD studies show that all films are polycrystalline with tetragonal crystal structure. The crystallite size observed is in the range 29-37 nm for various Sb doping concentrations. The surface morphology of Sb: SnO2 thin film is spherical with the continuous distribution of grains. The average transmittance of the undoped and Sb: SnO2 thin films, measured in the 450-850 nm wavelength is ranging between 70 and 95%. The best results are obtained at 1.5 wt.% Sb doping concentration, which are direct band gap of 3.82 eV, minimum sheet resistance of 5.7 Omega/cm(2), lowest resistivity of 3.76 x 10(-4) U-cm, carrier concentration and mobility of 4.46 x 10(19) cm(-3) and 372 cm(2) V-1 s(-1), respectively. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:145 / 152
页数:8
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