High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

被引：97

作者：

Arulkumaran, S ^{[1
]}

Egawa, T ^{[1
]}

Ishikawa, H ^{[1
]}

Jimbo, T ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Microstruct Devices, Show Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.1461420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The high-electron-mobility transistors (HEMTs) have been demonstrated on both sapphire and semi-insulating (SI) SiC substrates, and the dc characteristics of the fabricated devices were examined at temperatures ranging from 25 to 500 degreesC. The decrease in drain current and the transconductance with the increase of temperature have been observed. The decrease ratio of transconductance and drain current was similar for both the HEMTs on sapphire and SI-SiC substrates at and above 300 degreesC. The HEMTs on SiC substrates showed better dc characteristics after being subjected to thermal stress up to 500 degreesC. Although the SiC-based HEMTs showed better characteristics up to the temperature of 300 degreesC, compared with the sapphire-based HEMTs, similar dc characteristics were observed on both at and above 300 degreesC. For high-temperature applications (greater than or equal to300 degreesC), additional cooling arrangements are essential for both devices. (C) 2002 American Institute of Physics.

引用

页码：2186 / 2188

页数：3

共 13 条

[1] High-frequency measurements of AlGaN/GaN HEMTs at high temperatures [J].