High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

被引：93
|
作者：
Arulkumaran, S [1 ]
Egawa, T [1 ]
Ishikawa, H [1 ]
Jimbo, T [1 ]
机构：
[1] Nagoya Inst Technol, Res Ctr Microstruct Devices, Show Ku, Nagoya, Aichi 4668555, Japan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期
关键词：
D O I：
10.1063/1.1461420
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The high-electron-mobility transistors (HEMTs) have been demonstrated on both sapphire and semi-insulating (SI) SiC substrates, and the dc characteristics of the fabricated devices were examined at temperatures ranging from 25 to 500 degreesC. The decrease in drain current and the transconductance with the increase of temperature have been observed. The decrease ratio of transconductance and drain current was similar for both the HEMTs on sapphire and SI-SiC substrates at and above 300 degreesC. The HEMTs on SiC substrates showed better dc characteristics after being subjected to thermal stress up to 500 degreesC. Although the SiC-based HEMTs showed better characteristics up to the temperature of 300 degreesC, compared with the sapphire-based HEMTs, similar dc characteristics were observed on both at and above 300 degreesC. For high-temperature applications (greater than or equal to300 degreesC), additional cooling arrangements are essential for both devices. (C) 2002 American Institute of Physics.
引用
收藏
页码：2186 / 2188
页数：3
相关论文
共 50 条
  • [1] Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
    Arulkumaran, S
    Egawa, T
    Ishikawa, H
    Jimbo, T
    APPLIED PHYSICS LETTERS, 2002, 81 (16) : 3073 - 3075
  • [2] High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate
    Arulkumaran, S
    Egawa, T
    Ishikawa, H
    Jimbo, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (10B): : L1081 - L1083
  • [3] Manufacturing Microwave AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Truly Bulk Semi-Insulating GaN Substrates
    Piotrowska, A. B.
    Kaminska, E. A.
    Wojtasiak, W.
    Gwarek, W.
    Kucharski, R.
    Zajac, M.
    Prystawko, P.
    Kruszewski, P.
    Ekielski, M.
    Kaczmarski, J.
    Kozubal, M.
    Trajnerowicz, A.
    Taube, A.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 6, 2016, 75 (12): : 77 - 84
  • [4] AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
    Wojtasiak, Wojciech
    Goralczyk, Marcin
    Gryglewski, Daniel
    Zajac, Marcin
    Kucharski, Robert
    Prystawko, Pawel
    Piotrowska, Anna
    Ekielski, Marek
    Kaminska, Eliana
    Taube, Andrzej
    Wzorek, Marek
    MICROMACHINES, 2018, 9 (11):
  • [5] High-power-density 0.25 μm gate-length AlGaN/GaN high-electron-mobility transistors on semi-insulating 6H-SiC substrates
    Lee, J.-W.
    Kumar, V.
    Adesida, I.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (1 A): : 13 - 17
  • [6] High-power-density 0.25 μm gate-length AlGaN/GaN high-electron-mobility transistors on semi-insulating 6H-SiC substrates
    Lee, JW
    Kumar, V
    Adesida, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (1A): : 13 - 17
  • [7] Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates
    Arulkumaran, S
    Egawa, T
    Ishikawa, H
    SOLID-STATE ELECTRONICS, 2005, 49 (10) : 1632 - 1638
  • [8] Electrostatic discharge effects on AlGaN/GaN high electron mobility transistors on sapphire substrates
    Lee, SC
    Her, JC
    Han, SM
    Seo, KS
    Han, MK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 1941 - 1943
  • [9] DEVELOPMENT OF AlGaN/GaN/SiC HIGH-ELECTRON-MOBILITY TRANSISTORS FOR THz DETECTION
    Jakstas, V
    Jorudas, J.
    Janonis, V
    Minkevicius, L.
    Kasalynas, I
    Prystawko, P.
    Leszczynski, M.
    LITHUANIAN JOURNAL OF PHYSICS, 2018, 58 (02): : 188 - 193
  • [10] Electrostatic discharge effects in AlGaN/GaN high-electron-mobility transistors
    Kuzmík, J
    Pogany, D
    Gornik, E
    Javorka, P
    Kordos, P
    APPLIED PHYSICS LETTERS, 2003, 83 (22) : 4655 - 4657
12345