Optical critical points of thin-film Ge1-ySny alloys:: A comparative Ge1-ySny/Ge1-xSix study

被引:329
|
作者
D'Costa, VR [1 ]
Cook, CS
Birdwell, AG
Littler, CL
Canonico, M
Zollner, S
Kouvetakis, J
Menéndez, J
机构
[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
[2] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA
[3] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
[4] Univ N Texas, Dept Phys, Denton, TX 76203 USA
[5] Freescale Semicond Phys Anal Lab Arizona, PALAZ, Tempe, AZ 85284 USA
[6] APRDL, Austin, TX 78721 USA
来源
PHYSICAL REVIEW B | 2006年 / 73卷 / 12期
关键词
D O I
10.1103/PhysRevB.73.125207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The E-0, E-0+Delta(0), E-1, E-1+Delta(1), E-0('), and E-2 optical transitions have been measured in Ge1-ySny alloys (y < 0.2) using spectroscopic ellipsometry and photoreflectance. The results indicate a strong nonlinearity (bowing) in the compositional dependence of these quantities. Such behavior is not predicted by electronic structure calculations within the virtual crystal approximation. The bowing parameters for Ge1-ySny alloys show an intriguing correlation with the corresponding bowing parameters in the Ge1-xSix system, suggesting a scaling behavior for the electronic properties that is the analog of the scaling behavior found earlier for the vibrational properties. A direct consequence of this scaling behavior is a significant reduction (relative to prior theoretical estimates within the virtual crystal approximation) of the concentration y(c) for a crossover from an indirect- to a direct-gap system.
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页数:16
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