Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer

被引：56

作者：

Choi, KJ ^{[1
]}

Shin, WC ^{[1
]}

Yang, JH ^{[1
]}

Yoon, SG ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 05期

关键词：

D O I：

10.1063/1.124255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ferroelectric SrBi2Ta2O9 (SBT) and YMnO3 buffer layers for the metal/ferroelectric/ insulator/semiconductor (MFIS) structure were deposited using pulsed-laser ablation and metalorganic chemical vapor deposition, respectively. Memory windows of the MFIS structure were in the range of 0.3-1.5 V when the gate voltage varied from 2 to 6 V. There were no reactions between ferroelectric SBT and Si in the MFIS structure annealed at 900 degrees C. The YMnO3 buffer layer plays an important role in alleviating the interdiffusion between elements of SBT and Si. The proposed MFIS structure of Pt/200 nm-SBT/25 nm-YMnO3/Si is attractive for nondestructive read-out ferroelectric random access memory applications. (C) 1999 American Institute of Physics. [S0003-6951(99)04231-X].

引用

页码：722 / 724

页数：3

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