Origin of the defects-induced ferromagnetism in un-doped ZnO single crystals

被引：66

作者：

Zhan, Peng ^{[1
]}

Xie, Zheng ^{[1
]}

Li, Zhengcao ^{[1
]}

Wang, Weipeng ^{[1
]}

Zhang, Zhengjun ^{[1
]}

Li, Zhuoxin ^{[2
]}

Cheng, Guodong ^{[2
]}

Zhang, Peng ^{[2
]}

Wang, Baoyi ^{[2
]}

Cao, Xingzhong ^{[2
]}

机构：

[1] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 07期

关键词：

OXYGEN VACANCIES; PHOTOLUMINESCENCE; LUMINESCENCE; TEMPERATURE; EMISSION; HYDROGEN;

D O I：

10.1063/1.4793574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We clarified, in this Letter, that in un-doped ZnO single crystals after thermal annealing in flowing argon, the defects-induced room-temperature ferromagnetism was originated from the surface defects and specifically, from singly occupied oxygen vacancies denoted as F+, by the optical and electrical properties measurements as well as positron annihilation analysis. In addition, a positive linear relationship was observed between the ferromagnetism and the F+ concentration, which is in support with the above clarification. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793574]

引用

页数：5

共 52 条

[1]

[Anonymous], 1974, The Chemistry of Imperfect Crystals: Applications of Imperfection Chemistry, Solid State Reactions and Electrochemistry

[2] Enhancement of ferromagnetism upon thermal annealing in pure ZnO [J].