Low-power W-Band CPWG InAs/AlSb HEMT low-noise amplifier

被引：14

作者：

Riemer, PJ ^{[1
]}

Buhrow, BR

Hacker, JB

Bergman, J

Brar, B

Gilbert, BK

Daniel, ES

机构：

[1] Mayo Clin, Rochester, MN 55905 USA

[2] Rockwell Int Corp, Thousand Oaks, CA 91360 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 01期

关键词：

antimonide-based compound semiconductor (ABCS); high electron mobility transistor (HEMT); low-noise amplifier (LNA); InAs/AlSb; W-band;

D O I：

10.1109/LMWC.2005.861343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the development of a low-power W-band low-noise amplifier (LNA) designed in a 200-nm InAs/AlSb high electron mobility transistor (HEMT) technology fabricated on a 50-mu m GaAs substrate. A single-stage coplanar waveguide with ground (CPWG) LNA is described. The LNA exhibits a noise figure of 2.5 dB and an associated gain of 5.6 dB at 90 GHz while consuming 2.0 mW of total dc power. This is, to the best of our knowledge, the lowest reported noise figure for an InAs/AlSb HEMT LNA at 90 GHz. Biased for maximum gain, the single-stage amplifier presents 6.7-dB gain and an output 1-dB gain compression point (P1dB) of -6.7 dBm at 90 GHz. The amplifier provides broad-band gain, greater than 5 dB over the entire W-band.

引用

页码：40 / 42

页数：3

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