Demonstration of a High Extinction Ratio Monolithic CMOS Integrated Nanophotonic Transmitter and 16 Gb/s Optical Link

被引：40

作者：

Gill, Douglas M. ^{[1
]}

Proesel, Jonathan E. ^{[1
]}

Xiong, Chi ^{[1
]}

Orcutt, Jason S. ^{[1
]}

Rosenberg, Jessie C. ^{[1
]}

Khater, Marwan H. ^{[1
]}

Barwicz, Tymon ^{[1
]}

Assefa, Solomon ^{[1
]}

Shank, Steven M. ^{[2
]}

Reinholm, Carol ^{[2
]}

Ellis-Monaghan, John ^{[2
]}

Kiewra, Edward ^{[2
]}

Kamlapurkar, Swetha ^{[1
]}

Breslin, Chris M. ^{[1
]}

Green, William M. J. ^{[1
]}

Haensch, Wilfried ^{[1
]}

Vlasov, Yurii A. ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Microelect Div, Essex Jct, VT 05452 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2015年 / 21卷 / 04期

关键词：

Electrooptic modulators; integrated optics; electrooptic devices; HIGH-SPEED; CARRIER-DEPLETION; LOW-POWER; MODULATOR; PERFORMANCE; DRIVER; FABRICATION; CIRCUITS; DESIGN;

D O I：

10.1109/JSTQE.2014.2381468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a 16-Gb/s transmitter composed of a stacked voltage-mode CMOS driver and periodic-loaded reverse biased pn junction Mach-Zehnder modulator. The transmitter shows 9-dB extinction ratio and 10.3-pJ/bit power consumption and operates with 1.3 mu m light. Penalties as low as 0.5 dB were seen as compared to a 25-Gb/s LiNbO3 transmitter with both a monolithic metal-semiconductor-metal receiver and a reference receiver at 16-Gb/s operation. We also present an analytic expression for relative transmitter penalty (RTP), which allows one to quickly assess the system impact of design parameters such as peak-to-peak modulator drive voltage, modulator figure of merit, and transmitter extinction ratio to determine the circumstances under which a stacked CMOS cascode driver is desirable.

引用

页码：212 / 222

页数：11

共 54 条

[51] 25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions [J].