57Fe Mossbauer study of radiation damage in ion-implanted Si, SiGe and SiSn

被引：18
作者：
Gunnlaugsson, HP
Fanciulli, M
Dietrich, M
Bharuth-Ram, K
Sielemann, R
Weyer, G
机构：
[1] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark
[2] INFM, Lab MDM, I-20041 Agrate Brianza, MI, Italy
[3] CERN, Div EP, CH-1211 Geneva 23, Switzerland
[4] Univ Durban Westville, ZA-4000 Durban, South Africa
[5] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 186卷 / 1-4期
关键词：
Mossbauer spectroscopy; Mn and Fe in silicon; annealing of implantation damage;
D O I：
10.1016/S0168-583X(01)00858-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The radiation damage created in silicon-based materials by ion implantation of radioactive Mn-57 ions at temperatures of 77-500 K has been studied by Mossbauer spectroscopy on the 14 keV gamma-rays of the Fe-57 daughter atoms. At 77 K >60% of the probe atoms are located in a heavily distorted surrounding in all matrices, the remainder is found in tetrahedral interstitial sites. Two material dependent damage annealing stages have been found at 100-200 and 300-450 K. The first leads predominantly to an increase of the interstitial fraction, the second also to the occurrence of substitutional Mn in all matrices. A model is proposed to identify the annealing reactions, taking into account other Mossbauer and emission channeling data. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：55 / 60
页数：6
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