Negative resist corner rounding. Envelope volume modeling

被引:12
作者
Hagouel, PIL
Neureuther, AR
Zenk, AM
机构
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,ELECT RES LAB,BERKELEY,CA 94720
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期
关键词
D O I
10.1116/1.588586
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A pronounced feature of negative resist developed profiles is corner rounding. Almost all of the current resists are composed of polymeric materials and negative resists depend on cross-linking during exposure for feature delineation after development. The envelope sphere polymer molecule modeling describes the creation of the rounded profile at corners of resist lines during dissolution. A cellular automata dissolution model incorporates the envelope model, simulates the mechanics of the etching process, and predicts the corner rounding. We used Shipley SNR-248 negative resist for the experimental profiles. The experimental results confirm the dependence of the dissolution rate Er-i,Er-j on the differential etch rate between exposed and unexposed regions (volumes) of the resist. High postexposure bake temperatures and higher development environment temperatures modify the profiles. (C) 1996 American Vacuum Society.
引用
收藏
页码:4257 / 4261
页数:5
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