Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots

被引：8

作者：

Hospodkova, A. ^{[1
]}

Pangrac, J. ^{[1
]}

Oswald, J. ^{[1
]}

Hulicius, E. ^{[1
]}

Kuldova, K. ^{[1
]}

Vyskocil, J. ^{[1
,2
]}

Melichar, K. ^{[1
]}

Simecek, T. ^{[1
]}

机构：

[1] Inst Phys AS CR, VVI, Prague 16200 6, Czech Republic

[2] Czech Tech Univ, Dept Mech & Mat Sci, Prague 16627 6, Czech Republic

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期

关键词：

Atomic force microscopy; Nanostructures; Low-pressure metalorganic vapor phase epitaxy; Semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2008.07.011

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

During the capping process of InAs/GaAs quantum dots (QDs), the redistribution of In atoms decreases the height of QDs and changes their shape. These changes can be influenced not only by the composition of the covering strain reducing layer but also by the growth parameters of layers covering QDs. We have studied the effect of GaAs capping layer growth rate on the QD properties, It was found that a higher GaAs capping layer growth rate enhances the surfactant behavior of In atoms and diminishes the alloying effect in QD Surrounding material. Higher capping layer growth rate can also decrease the dissolution of In atoms from QDs. The capping layer growth rate has stronger effect on the ground state photoluminescence (PL) maximum energy, when InGaAs strain reducing layer is not present in the structure. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：5081 / 5084

页数：4

共 8 条

[1] Interplay between thermodynamics and kinetics in the capping of InAs/GaAs(001) quantum dots [J].

Costantini, G. ;

Rastelli, A. ;

Manzano, C. ;

Acosta-Diaz, P. ;

Songmuang, R. ;

Katsaros, G. ;

Schmidt, O. G. ;

Kern, K. .

PHYSICAL REVIEW LETTERS, 2006, 96 (22)

[2] Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs [J].

Hospodkova, A. ;

Hulicius, E. ;

Oswald, J. ;

Pangrac, J. ;

Mates, T. ;

Kuldova, K. ;

Melichar, K. ;

Simecek, T. .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 (582-585) :582-585

[3] Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures [J].

Hulicius, Eduard ;

Oswald, Jiri ;

Pangrac, Jiri ;

Vyskocil, Jan ;

Hospodkova, Alice ;

Kuldova, Karla ;

Melichar, Karel ;

Simecek, Tomislav .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) :2229-2233

[4] Elongation of InAs/GaAs quantum dots from magnetophotoluminescence measurements [J].

Krapek, V. ;

Kuldova, K. ;

Oswald, J. ;

Hospodkova, A. ;

Hulicius, E. ;

Humlicek, J. .

APPLIED PHYSICS LETTERS, 2006, 89 (15)

[5] Shape evolution of InAs quantum dots during overgrowth [J].

Songmuang, R ;

Kiravittaya, S ;

Schmidt, OG .

JOURNAL OF CRYSTAL GROWTH, 2003, 249 (3-4) :416-421

[6] Tn situ monitoring of InAs-on-GaAs quantum dot formation in MOVPE by reflectance-anisotropy-spectroscopy and ellipsometry [J].

Steimetz, E ;

Zettler, JT ;

Schienle, F ;

Trepk, T ;

Wethkamp, T ;

Richter, W ;

Sieber, I .

APPLIED SURFACE SCIENCE, 1996, 107 :203-211

[7] Controlling the shape of InAs self-assembled quantum dots by thin GaAs capping layers [J].

Takehana, K ;

Pulizzi, F ;

Patané, A ;

Henini, M ;

Main, PC ;

Eaves, L ;

Granados, D ;

Garcia, JM .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :155-160

[8] Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study [J].

Westwood, DI ;

Sobiesierski, Z ;

Matthai, CC ;

Steimetz, E ;

Zettler, T ;

Richter, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2358-2366

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