A New Method for SSD Black-box Performance Test

被引:0
作者
Xie, Qiyou [1 ]
机构
[1] Natl Univ Def Technol, Coll Elect Sci & Engn, Deya St 109, Changsha 410073, Hunan, Peoples R China
来源
2017 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM - SPRING (PIERS) | 2017年
关键词
MEMORY TECHNOLOGIES; FLASH MEMORY; FUTURE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the past decade, NAND Flash has stood out from numerous non-volatile storage mediums. The NAND Flash based Solid State Disk (SSD) has been widely used in many storing required fields such as embedded applications and data center. A new and efficient SSD black-box performance test method is revising in this paper. The designed test system contains time parameter getter, excitation signal generator, buffer unit, write/read controller and SSD. With the application of the proposed method, not only the influence of TRIM mechanism could been analyzed, but also the test precision is increased significantly. To verify the validity and performance of our test system, the IOPS, response time and write/read bandwidth of the universal testing software (IOMETER, HDTUNE, etc.) and SATA protocol analyzer are presented and compared with our method in detail.
引用
收藏
页码:1116 / 1122
页数:7
相关论文
共 15 条
[1]  
Bidokhti N., 2016, RDT, P1
[2]   Black-box forensic and antiforensic characteristics of solid-state drives [J].
Bonetti, Gabriele ;
Viglione, Marco ;
Frossi, Alessandro ;
Maggi, Federico ;
Zanero, Stefano .
JOURNAL OF COMPUTER VIROLOGY AND HACKING TECHNIQUES, 2014, 10 (04) :255-271
[3]  
Bucy J.S., 2008, DISKSIM SIMULATION E
[4]  
Desnoyers P., 2012, P SYST 12 NEW YORK N, P11
[5]   Experimental Investigation of Program Voltage (20 V) Generation With Boost Converter for 3-D-Stacked NAND Flash SSD [J].
Hatanaka, Teruyoshi ;
Johguchi, Koh ;
Takeuchi, Ken .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2015, 5 (02) :188-193
[6]   Memory technology in the future [J].
Kim, Kinam ;
Lee, S. Y. .
MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) :1976-1981
[7]   Predictive Modeling of Channel Potential in 3-D NAND Flash Memory [J].
Kim, Yoon ;
Kang, Myounggon .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (11) :3901-3904
[8]  
Kim Y, 2009, SIMUL: 2009 FIRST INTERNATIONAL CONFERENCE ON ADVANCES IN SYSTEM SIMULATION, P125, DOI 10.1109/SIMUL.2009.17
[9]   Future challenges of flash memory technologies [J].
Lu, Chih-Yuan ;
Hsieh, Kuang-Yeu ;
Liu, Rich .
MICROELECTRONIC ENGINEERING, 2009, 86 (03) :283-286
[10]   Overview of emerging nonvolatile memory technologies [J].
Meena, Jagan Singh ;
Sze, Simon Min ;
Chand, Umesh ;
Tseng, Tseung-Yuen .
NANOSCALE RESEARCH LETTERS, 2014, 9 :1-33